양극성 RF 트랜지스터는 무선 주파수와 관련된 장비에서 신호를 전환하거나 증폭하는 데 사용되는 3개의 단자가 있는 반도체 장치입니다. 바이폴라 접합 트랜지스터는 NPN 또는 PNP로 설계되었으며 트랜지스터 유형, 컬렉터-에미터 항복 전압, 전이 주파수, 잡음 지수, 이득, 전력, DC 전류 이득 및 컬렉터 전류의 특성을 갖습니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
BFQ31ATABipolar RF Transistors | Diodes Incorporated | RF TRANS NPN 15V 600MHZ SOT23-3 | 재고 | - | |
LM3046MBipolar RF Transistors | Texas Instruments | Transistor Array 14-SOIC -40 to 85 | 6718 | - | |
2SC5265LS-1HXBipolar RF Transistors | onsemi | TRANSISTOR RF | 9015 | - | |
2SC4215-O(TE85L,F)Bipolar RF Transistors | Toshiba Electronic Devices and Storage Corporation | RF TRANS NPN 30V 550MHZ USM | 1869 | - | |
GRP-B-DATA-JANTX2N4957UBBipolar RF Transistors | Microchip Technology | silicon PNP transistor designed for VHF-UHF equipment | 재고 | - | |
GRP-A-DATA-JANTX2N918UBBipolar RF Transistors | Microchip Technology | Trans RF BJT NPN 15V 0.05A 200mW 4-Pin Case UB Waffle | 재고 | - | |
GRP-ABC-JANTX2N918UBBipolar RF Transistors | Microchip Technology | Trans RF BJT NPN 15V 0.05A 200mW 4-Pin Case UB Waffle | 재고 | - | |
GRP-B-DATA-JANTX2N918UBBipolar RF Transistors | Microchip Technology | Trans RF BJT NPN 15V 0.05A 200mW 4-Pin Case UB Waffle | 재고 | - | |
GRP-ABC-JANTX2N4957UBBipolar RF Transistors | Microchip Technology | silicon PNP transistor designed for VHF-UHF equipment | 재고 | - | |
GRP-B-DATA-JANTX2N918Bipolar RF Transistors | Microchip Technology | Trans RF BJT NPN 15V 0.05A 200mW 4-Pin TO-72 Bag | 재고 | - | |
GRP-A-DATA-JANTX2N918Bipolar RF Transistors | Microchip Technology | Trans RF BJT NPN 15V 0.05A 200mW 4-Pin TO-72 Bag | 재고 | - | |
GRP-ABC-JANTX2N918Bipolar RF Transistors | Microchip Technology | Trans RF BJT NPN 15V 0.05A 200mW 4-Pin TO-72 Bag | 재고 | - | |
JANTX2N918/TRBipolar RF Transistors | Microchip Technology | Trans RF BJT NPN 15V 0.05A 200mW 4-Pin TO-72 Bag | 재고 | - | |
GRP-B-DATA-JANTX2N2857Bipolar RF Transistors | Microchip Technology | Trans RF BJT NPN 15V 0.04A 4-Pin TO-72 | 재고 | - | |
GRP-A-DATA-JANTX2N2857Bipolar RF Transistors | Microchip Technology | Trans RF BJT NPN 15V 0.04A 4-Pin TO-72 | 재고 | - | |
GRP-A-DATA-JANTX2N4957Bipolar RF Transistors | Microchip Technology | Trans RF BJT PNP 30V 0.03A 200mW 3-Pin(2+Tab) TO-66 Bag | 재고 | - | |
GRP-A-DATA-JANTX2N4957UBBipolar RF Transistors | Microchip Technology | silicon PNP transistor designed for VHF-UHF equipment | 재고 | - | |
MT4S03BU(TE85L,F)Bipolar RF Transistors | Toshiba Electronic Devices and Storage Corporation | TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE | 재고 | - | |
MAX2601ESA+Bipolar RF Transistors | Analog Devices Inc. | Trans RF BJT NPN 17V 1.2A 6400mW 8-Pin SOIC EP Tube | 재고 | - | |
MAX2602ESA+TBipolar RF Transistors | Analog Devices Inc. | Trans RF BJT NPN 17V 1.2A 6400mW 8-Pin SOIC EP T/R | 재고 | - | |
MT3S111TU,L7F(TBipolar RF Transistors | Toshiba Electronic Devices and Storage Corporation | Trans RF BJT NPN 6V 0.1A 800mW 3-Pin UFM | 재고 | - | |
GRP-DATA-JANTXV2N918Bipolar RF Transistors | Microchip Technology | Trans RF BJT NPN 15V 0.05A 4-Pin TO-72 | 재고 | - | |
2SC2099Bipolar RF Transistors | Toshiba Electronic Devices and Storage Corporation | Trans RF BJT NPN 18V 6A 60000mW 4-Pin 2-10H1A | 재고 | - | |
2SC2347(F)Bipolar RF Transistors | Toshiba Electronic Devices and Storage Corporation | TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANER TYPE | 재고 | - | |
2SC4915-Y,LF(TBipolar RF Transistors | Toshiba Electronic Devices and Storage Corporation | Trans RF BJT NPN 30V 0.02A 100mW 3-Pin SSM T/R | 8436 | - |