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양극성 RF 트랜지스터
(2921 결과)양극성 RF 트랜지스터는 무선 주파수와 관련된 장비에서 신호를 전환하거나 증폭하는 데 사용되는 3개의 단자가 있는 반도체 장치입니다. 바이폴라 접합 트랜지스터는 NPN 또는 PNP로 설계되었으며 트랜지스터 유형, 컬렉터-에미터 항복 전압, 전이 주파수, 잡음 지수, 이득, 전력, DC 전류 이득 및 컬렉터 전류의 특성을 갖습니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
 BFP405E6433HTMA1Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 5V 25GHZ SOT343-4 | 재고 | - | |
 BFP 405F E6327Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 5V 25GHZ 4TSFP | 재고 | - | |
 BFP460E6327HTSA1Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 5.8V 22GHZ SOT343-4 | 18905 | - | |
 BFR 182 B6663Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 12V 8GHZ SOT23-3 | 재고 | - | |
 BFR 182W E6327Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 12V 8GHZ SOT323-3 | 재고 | - | |
BFR183E6327HTSA1Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 12V 8GHZ SOT23-3 | 8276 | - | |
 BFR 183T E6327Bipolar RF Transistors | Infineon Technologies | RF TRANS NPN 12V 8GHZ SC75 | 18067 | - | |
 MMBT918LT1GBipolar RF Transistors | onsemi | Trans RF BJT NPN 15V 0.05A 300mW 3-Pin SOT-23 T/R | 14940 | - | |
 CMPTH81 TRBipolar RF Transistors | Central Semiconductor | RF TRANS PNP 20V 600MHZ SOT23 | 재고 | - | |
SMMBTH10-4LT3GBipolar RF Transistors | onsemi | NPN Bipolar Transistor, SOT-23 (TO-236) 3 LEAD, 10000-REEL | 3988 | - | |
 JAN2N2857Bipolar RF Transistors | Microsemi | RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-72, HERMETIC SEALED, METAL CAN-4 | 재고 | - | |
JANTXV2N2857Bipolar RF Transistors | Microsemi | RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-72, HERMETIC SEALED, METAL CAN-4 | 69 | - | |
 2N2857UBBipolar RF Transistors | Microsemi | RF TRANS NPN 15V 0.04A UB | 재고 | - | |
JAN2N2857UBBipolar RF Transistors | Microsemi | RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, HERMETIC SEALED, CERAMIC, CERSOT-3 | 재고 | - | |
JANTX2N2857UBBipolar RF Transistors | Microsemi | RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, HERMETIC SEALED, CERAMIC, CERSOT-3 | 재고 | - | |
 JANTXV2N2857UBBipolar RF Transistors | Microsemi | RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, HERMETIC SEALED, CERAMIC, CERSOT-3 | 재고 | - | |
2N4957Bipolar RF Transistors | Microsemi | RF Small Signal Bipolar Transistor, 0.03A I(C), PNP | 9516 | - | |
JAN2N4957Bipolar RF Transistors | Microsemi | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, PNP, TO-72, HERMETIC SEALED, METAL CAN-4 | 재고 | - | |
JANTXV2N4957Bipolar RF Transistors | Microsemi | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, PNP, TO-72, HERMETIC SEALED, METAL CAN-4 | 재고 | - | |
2N4957UBBipolar RF Transistors | Microsemi | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, PNP, CERSOT-3 | 재고 | - | |
JAN2N4957UBBipolar RF Transistors | Microsemi | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, PNP, CERSOT-3 | 재고 | - | |
JANTX2N4957UBBipolar RF Transistors | Microsemi | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, PNP, CERSOT-3 | 재고 | - | |
JANTXV2N4957UBBipolar RF Transistors | Microsemi | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, PNP, CERSOT-3 | 재고 | - | |
 NSVF4020SG4T1GBipolar RF Transistors | onsemi | Trans RF BJT NPN 8V 0.15A 400mW Automotive 4-Pin MCPH T/R | 3595 | - | |
 NSVF6003SB6T1GBipolar RF Transistors | onsemi | Trans RF BJT NPN 12V 0.15A 800mW Automotive 6-Pin CPH T/R | 2708 | - |
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