TPS22996H-Q1

The TPS22996H-Q1 is a high-performance, low-side N-channel MOSFET switch designed for automotive applications, offering robust power management in demanding environments. It features a very low on-resistance of 4.5 mΩ at 5 V gate drive, ensuring minimal power loss and high efficiency during operation. The device supports a wide input voltage range from 3.0 V to 5.5 V, making it suitable for various battery-powered systems, including those with nominal voltages of 3.3 V or 5 V. This switch includes integrated protection features such as over-current protection (OCP), thermal shutdown, and under-voltage lockout (UVLO), which enhance system reliability and prevent damage from fault conditions. The OCP function detects excessive current flow and shuts down the device to protect both the switch and connected loads. Thermal shutdown activates when junction temperature exceeds safe limits, automatically turning off the switch until it cools down. Designed for AEC-Q100 Grade 1 qualification, the TPS22996H-Q1 meets stringent automotive standards for reliability and durability, including resistance to vibration, humidity, and temperature extremes. Its small 3 mm × 3 mm WQFN package enables compact board layouts while maintaining excellent thermal performance through exposed paddle design. The device operates with a typical propagation delay of less than 1 μs, allowing fast switching response for dynamic load control in real-time systems. It also offers low quiescent current—less than 1 μA in shutdown mode—making it ideal for always-on applications where power consumption must be minimized. Applications include automotive infotainment systems, body control modules, sensor interfaces, and DC-DC converter output stages. It effectively replaces mechanical relays and discrete solutions by providing solid-state switching with higher speed, longer life, and reduced electromagnetic interference (EMI). The TPS22996H-Q1 is especially suited for use in safety-critical systems where consistent performance and fault tolerance are essential. Its built-in charge pump allows for full enhancement of the N-channel MOSFET even at low supply voltages, ensuring reliable turn-on behavior across the entire operating range. Additionally, the internal pull-down resistor eliminates the need for external components, simplifying circuit design and reducing BOM cost.