STW35N60DM2

STW35N60DM2 is a high-performance N-channel Power MOSFET manufactured by STMicroelectronics, designed for efficient power conversion and switching applications. It features a maximum drain-source voltage (VDS) of 600 V, enabling robust operation in high-voltage environments such as industrial motor drives, power supplies, and inverters. The device offers a low on-state resistance (RDS(on)) of typically 1.4 ฮฉ at VGS = 10 V, which minimizes conduction losses and improves overall system efficiency. This MOSFET is optimized for fast switching speeds due to its advanced trench technology and low gate charge (QG), reducing switching losses and enabling higher-frequency operation. Its rugged construction supports high surge current capability and excellent thermal performance, allowing reliable operation under demanding conditions. The integrated body diode provides efficient freewheeling functionality in inductive load circuits, eliminating the need for an external diode in many applications. The STW35N60DM2 is housed in a TO-247 package, offering superior thermal dissipation through direct mounting on heatsinks. This makes it ideal for applications requiring compact design and effective heat management, such as in AC/DC and DC/DC converters, solar inverters, and uninterruptible power supplies (UPS). The device also includes built-in protection against secondary breakdown, enhancing reliability in fault conditions like short circuits or overloads. Designed with a threshold voltage (Vth) range of 2.5 to 4.0 V, the STW35N60DM2 is compatible with standard logic-level drivers, simplifying control circuit integration. Its low input capacitance and optimized gate characteristics ensure stable and responsive switching behavior, particularly in high-frequency switching topologies like PWM and resonant converters. Additionally, the device meets AEC-Q101 automotive qualification standards, making it suitable for use in electric vehicle (EV) power systems, battery management, and onboard chargers. In summary, the STW35N60DM2 delivers high reliability, low losses, and excellent thermal performance in high-voltage power applications. Its combination of low RDS(on), fast switching, and robust packaging positions it as a preferred choice for engineers seeking efficient and durable solutions in industrial, renewable energy, and automotive electronics.

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STMicroelectronics_STW35N60DM2

STW35N60DM2

Single FETs, MOSFETs
STMicroelectronics N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-247 package
2
1+: $5.96400
10+: $5.07943
30+: $4.55315