STW26N65DM2

STW26N65DM2 is a high-performance N-channel Power MOSFET manufactured by STMicroelectronics, designed for efficient switching applications in power management systems. It features a maximum drain-source voltage (VDS) of 650 V, allowing it to handle high-voltage circuits commonly found in industrial and consumer electronics. The device offers a low on-resistance of typically 135 mΩ at VGS = 10 V, which minimizes conduction losses and improves overall system efficiency—particularly beneficial in high-current applications such as DC-DC converters and motor drives. This MOSFET is optimized for fast switching with a gate charge (QG) of just 75 nC at VGS = 10 V, reducing switching losses and enabling higher operating frequencies. Its advanced trench technology ensures excellent thermal performance and reliability under continuous operation. The device also includes an integrated antiparallel diode, which simplifies circuit design in applications like inverters and synchronous rectification topologies. The STW26N65DM2 is housed in a TO-247 package, providing robust mechanical strength and effective heat dissipation, essential for high-power environments. It supports a continuous drain current (ID) of up to 26 A at 25°C junction temperature, making it suitable for demanding power conversion tasks. The device’s rugged construction allows it to withstand surge currents and operate reliably in harsh conditions, including high ambient temperatures and electrical noise. Its wide safe operating area (SOA) enhances protection against overcurrent and short-circuit events, improving system safety and longevity. The MOSFET is compliant with RoHS standards and is ideal for use in energy-efficient designs that meet modern environmental and regulatory requirements. Applications include switched-mode power supplies (SMPS), solar inverters, electric vehicle chargers, uninterruptible power supplies (UPS), and industrial motor control systems. In these contexts, the STW26N65DM2 delivers reliable performance, reduced energy loss, and compact form factor—making it a preferred choice for engineers seeking high efficiency, durability, and ease of integration in next-generation power electronics.