STH13N120K5-2AG

STH13N120K5-2AG is a high-performance N-channel MOSFET manufactured by STMicroelectronics, designed for efficient power switching applications. It features a maximum drain-source voltage (VDS) of 1200 V, making it suitable for high-voltage systems such as industrial motor drives, power supplies, and renewable energy inverters. The device has a continuous drain current (ID) rating of 13 A at 25°C junction temperature, ensuring reliable operation under demanding load conditions. This MOSFET exhibits low on-resistance (RDS(on) = 1.8 Ω max at VGS = 10 V), which minimizes conduction losses and improves overall system efficiency. Its optimized gate charge (Qg = 67 nC typ.) allows for fast switching speeds, reducing switching losses and enabling higher operating frequencies in power converters. The device also includes a robust avalanche capability, enhancing reliability in inductive load environments where voltage spikes may occur. Constructed with advanced trench technology and a planar process, the STH13N120K5-2AG offers excellent thermal performance and mechanical stability. It is packaged in a TO-247-3L configuration, facilitating easy mounting on heat sinks and integration into PCB designs. The package supports high thermal conductivity, allowing efficient heat dissipation during prolonged operation. Key applications include industrial power supplies, photovoltaic inverters, electric vehicle charging systems, and medium-power motor control circuits. Its ability to handle high voltages while maintaining low power loss makes it ideal for energy-efficient designs. Additionally, the device complies with RoHS standards, supporting environmentally responsible manufacturing practices. The STH13N120K5-2AG is engineered for long-term reliability, featuring a high degree of ruggedness against electrostatic discharge (ESD) and safe operating area (SOA) protection. These characteristics ensure stable performance across varying environmental conditions, from harsh industrial settings to outdoor solar installations. With its balance of electrical performance, thermal management, and durability, this MOSFET serves as a critical component in modern high-efficiency power electronics.