STH10N80K5-2AG

STH10N80K5-2AG is a high-voltage N-channel power MOSFET manufactured by STMicroelectronics, designed for efficient switching applications in power conversion and management systems. The device features a maximum drain-source voltage (VDS) of 800 V, making it suitable for high-voltage environments such as industrial motor drives, switch-mode power supplies (SMPS), and DC-DC converters. With a continuous drain current (ID) of 10 A at 25°C junction temperature, it delivers robust performance under demanding load conditions. The MOSFET exhibits low on-resistance (RDS(on) = 1.4 Ω at VGS = 10 V), which minimizes conduction losses and enhances overall system efficiency. Its optimized gate charge (QG = 63 nC typical) ensures fast switching speeds, reducing switching losses and enabling higher operating frequencies in modern power electronics designs. The device also includes a built-in anti-parallel diode, simplifying circuit design in inductive load applications like buck converters and inverters. Packaged in a TO-220AB form factor, the STH10N80K5-2AG offers reliable thermal performance through effective heat dissipation, allowing operation over a wide temperature range from -55°C to +150°C. It is fully characterized for safe operation under avalanche conditions, providing enhanced protection against voltage spikes and transient overloads. This makes it ideal for use in harsh environments where electrical stress is common. Common applications include industrial power supplies, battery charging systems, solar inverters, and motor control circuits. Its combination of high breakdown voltage, low conduction loss, and excellent thermal characteristics supports energy-efficient and compact power solutions across various industries. The device complies with RoHS standards, reflecting STMicroelectronics’ commitment to environmentally responsible manufacturing practices.