STGD25N40LZAG

STGD25N40LZAG is a high-performance N-channel power MOSFET manufactured by STMicroelectronics, designed for efficient switching applications in modern power electronics. It features a maximum drain-source voltage (VDS) of 400 V, allowing it to handle high-voltage circuits commonly found in industrial and consumer power supplies. The device has a continuous drain current (ID) rating of 25 A at 25ยฐC junction temperature, making it suitable for high-current load conditions while maintaining thermal stability. This MOSFET utilizes STโ€™s advanced trench technology to achieve low on-resistance (RDS(on) โ‰ค 0.16 ฮฉ at VGS = 10 V), which minimizes conduction losses and improves overall system efficiency. Its optimized gate charge (Qg โ‰ˆ 78 nC) enables fast switching speeds, reducing switching lossesโ€”especially beneficial in high-frequency applications such as switch-mode power supplies (SMPS), DC-DC converters, and motor drives. The device also includes a built-in anti-parallel diode, simplifying circuit design in inductive load scenarios like relay control or buck/boost converters. The STGD25N40LZAG is housed in a TO-220 package, offering robust mechanical strength and reliable thermal dissipation through the exposed pad, which can be soldered directly to a PCB for enhanced heat transfer. This packaging supports easy integration into existing designs while ensuring long-term reliability under harsh operating conditions. It is widely used in applications requiring high efficiency and compact design, including industrial power supplies, battery chargers, uninterruptible power supplies (UPS), solar inverters, and motor control systems. Its rugged construction and excellent thermal performance make it ideal for environments where space constraints and energy efficiency are critical considerations. Designed with a minimum gate threshold voltage (VGS(th)) of 2.5 V, the device is compatible with standard logic-level drivers, simplifying interface with microcontrollers and digital control ICs. Additionally, its avalanche energy capability ensures safe operation during transient overvoltage events, enhancing system protection without additional external components.

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STMicroelectronics_STGD25N40LZAG

STGD25N40LZAG

Single IGBTs
STMicroelectronics Automotive-grade 400 V internally clamped IGBT ESCIS 320 mJ
24
1+: $2.12090
10+: $1.77910
30+: $1.56560