SCTH60N120G2-7AG

The SCTH60N120G2-7AG is a high-performance N-channel power MOSFET manufactured by STMicroelectronics, designed for efficient switching applications in demanding industrial and automotive environments. It features a maximum drain-source voltage (VDS) of 1200 V, making it suitable for high-voltage DC-DC converters, motor drives, and power supplies operating in harsh conditions. This device offers a low on-resistance of 1.3 Ω at VGS = 10 V, ensuring minimal conduction losses and high energy efficiency. Its advanced trench technology enhances thermal performance and reduces switching losses, enabling faster turn-on and turn-off times compared to conventional MOSFETs. The gate charge (Qg) is optimized for fast switching, supporting operation at frequencies up to several hundred kHz, which is critical for reducing electromagnetic interference (EMI) and improving system compactness. The SCTH60N120G2-7AG includes an integrated anti-parallel diode with low forward voltage drop, simplifying circuit design for applications requiring freewheeling paths, such as inductive load switching or inverter topologies. The device also features a robust avalanche ruggedness rating, allowing safe operation under transient overvoltage conditions without degradation in performance or reliability. Packaged in a TO-247-3L form factor, the transistor provides excellent thermal dissipation through its exposed paddle, facilitating easy mounting on heatsinks and integration into PCB designs with high thermal conductivity requirements. It meets AEC-Q101 qualification standards, making it ideal for automotive applications including electric vehicle (EV) charging systems, onboard inverters, and battery management systems. Designed for reliability in extreme temperatures, the device operates reliably from -55°C to +150°C junction temperature range, ensuring stable performance in both cold-start conditions and high-temperature environments typical in industrial power systems. Its high dv/dt immunity and low gate leakage current further enhance stability in noisy electrical environments. In summary, the SCTH60N120G2-7AG delivers exceptional performance, durability, and efficiency in high-voltage power conversion and control applications across industrial, automotive, and renewable energy sectors.

Related Parts


부분 # 제조업체 설명 유효성 가격 수량
STMicroelectronics_SCTH60N120G2-7AG

SCTH60N120G2-7AG

Single FETs, MOSFETs
STMicroelectronics Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 55 A in an H2PAK-7 package
재고
-