NVMJS1D4N06CL

NVMJS1D4N06CL is a high-performance N-channel MOSFET manufactured by onsemi, designed for efficient power management in demanding applications. It features a low on-resistance of 6 mΩ at VGS = 10 V, enabling minimal conduction losses and high energy efficiency. The device is optimized for operation with a maximum drain-source voltage (VDS) of 60 V, making it suitable for medium-voltage switching circuits. This MOSFET utilizes onsemi’s advanced trench technology to achieve superior gate charge (Qg) characteristics, reducing switching losses and improving overall system performance. With a continuous drain current (ID) rating of up to 130 A at 25°C junction temperature, it supports robust operation under heavy load conditions. The low gate threshold voltage (Vth) of 1.5 V ensures reliable turn-on even with low drive voltages, enhancing compatibility with modern control ICs and microcontrollers. The NVMJS1D4N06CL is packaged in a TO-220-3L form factor, offering excellent thermal performance through direct mounting on heatsinks. Its rugged construction and built-in protection against avalanche breakdown make it ideal for use in harsh environments where reliability and durability are critical. The device also exhibits low parasitic inductance due to its optimized layout, minimizing voltage overshoot during fast switching events. Common applications include DC-DC converters, motor drives, battery management systems, and industrial power supplies. It excels in automotive electronics such as electric power steering and onboard chargers, where high efficiency and thermal stability are essential. Additionally, it supports renewable energy systems like solar inverters and energy storage solutions, where long-term reliability and minimal power loss are key design considerations. Engineered for compliance with AEC-Q101 standards, the NVMJS1D4N06CL meets stringent automotive qualification requirements, ensuring consistent performance across wide temperature ranges—from -55°C to +175°C junction temperature. Its robust electrical specifications and proven manufacturing process make it a preferred choice for engineers seeking a balance of performance, cost-effectiveness, and reliability in high-power applications.

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NVMJS1D4N06CLTWG

Single FETs, MOSFETs
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3000
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