NVH082N65S3F

NVH082N65S3F is a high-performance N-channel MOSFET manufactured by onsemi, designed for efficient power conversion and switching applications. It features a maximum drain-source voltage (VDS) of 650 V, making it suitable for high-voltage systems such as industrial motor drives, solar inverters, and power supplies. The device exhibits a low on-resistance (RDS(on)) of 0.082 Ω at VGS = 10 V, ensuring minimal conduction losses and improved energy efficiency. This MOSFET is optimized for fast switching speeds, with a total gate charge (Qg) of 45 nC and a low input capacitance, enabling high-frequency operation while reducing switching losses. Its advanced trench technology enhances thermal performance and reliability under continuous load conditions, allowing for compact PCB designs without sacrificing heat dissipation. The NVH082N65S3F is packaged in a TO-220-3L (isolated) configuration, which provides robust mechanical stability and ease of integration into existing power modules. It supports both through-hole and surface-mount mounting options, offering flexibility in manufacturing processes. The device is fully characterized for safe operating area (SOA), ensuring reliable performance even under transient overcurrent or short-circuit events. Key applications include AC-DC and DC-DC converters, uninterruptible power supplies (UPS), electric vehicle (EV) charging systems, and industrial automation equipment. Its rugged design and comprehensive protection features make it ideal for harsh environments where long-term stability and minimal maintenance are critical. The component complies with RoHS standards and is built to meet automotive-grade quality requirements, making it suitable for use in safety-critical systems such as battery management units and motor controllers in hybrid and electric vehicles. Its consistent performance across temperature ranges—from -55°C to +175°C—ensures operational reliability in extreme conditions.