NV93C76WF

The NV93C76WF is a low-voltage, serial EEPROM manufactured by onsemi, designed for reliable data storage in embedded systems. It features a 512 x 8-bit memory array, offering 512 bytes of non-volatile storage capacity. The device operates across a wide supply voltage range of 1.7V to 5.5V, making it suitable for both low-power and standard voltage applications. It supports a maximum clock frequency of 10 MHz, ensuring fast read and write operations while maintaining compatibility with various microcontroller interfaces. This EEPROM utilizes a simple two-wire interface—comprising a serial data line (SDI) and a serial clock line (SCL)—for easy integration into system designs. It includes built-in write protection mechanisms such as hardware write-protect pins and software-based block write protection, enhancing data security against accidental erasure or modification. The NV93C76WF also features an endurance of up to 1 million write cycles and data retention of up to 200 years, guaranteeing long-term reliability in demanding environments. Designed for industrial, consumer, and automotive applications, the NV93C76WF excels in scenarios requiring small form factor, low power consumption, and robust performance. Common use cases include configuration storage in microprocessor-based systems, calibration data retention in sensors, and firmware updates in battery-powered devices. Its compact 8-pin DIP and SO packages support surface-mount and through-hole mounting options, facilitating flexible PCB layout designs. The device incorporates self-timed write cycles, eliminating the need for external timing control during programming. It also supports page write mode for efficient bulk data writing, reducing overall system overhead. With a low standby current of less than 1 µA, the NV93C76WF is ideal for energy-sensitive applications where minimizing power consumption is critical. Additionally, it meets ESD protection standards of ±4 kV HBM, ensuring resilience against electrostatic discharge during handling and operation.