ROHM Semiconductor

BR25H080FVT-2CE2

A: The BR25H080FVT-2CE2 is engineered for long‑term reliability. Key specifications include: Write Endurance: Guaranteed for at least 1,000,000 (1 million) write/erase cycles【8†L4‑L5】. Data Retention: Rated for 100 years. Write Cycle Time: The self‑timed write cycle (word or page) is a maximum of 4 ms. Data at Shipment: The memory array is shipped in the FFh state, and the status register bits (WPEN, BP1, BP0) are 0【10†L29‑L30】. AEC‑Q100 Grade 1: Qualified for automotive applications, meeting the rigorous reliability standards required for systems operating across the full –40°C to +125°C temperature range.

A: The device uses a standard 4‑wire SPI bus and supports both SPI Mode 0 and Mode 3 (CPOL, CPHA) = (0,0) and (1,1), ensuring compatibility with a broad range of microcontrollers. It includes the following advanced features: HOLD Function: The HOLDB terminal provides a “wait” function, allowing the host to pause an ongoing serial communication without resetting the sequence. Self‑timed Write Cycle: The internal write cycle is automatically timed, requiring no external control. Comprehensive Write Protection: The device integrates multiple hardware and software write‑protection mechanisms to prevent accidental data corruption【10†L26‑L28】: Hardware Write Protection: Using the WPB pin. Software Write Protection: Via the Write Disable (WRDI) command and configurable block protection using the Status Register bits (BP1, BP0). Low‑Voltage Write Inhibit: Prevents write operations when the supply voltage is below a safe threshold. Auto Address Increment: Facilitates sequential read operations.

A: The BR25H080FVT-2CE2 is designed for low‑power, high‑reliability applications. Key specifications are summarized in the table below: Parameter Specification Memory Capacity 8 Kbit (1024 bytes) Memory Organization 1K x 8 bits Memory Interface SPI BUS (CPOL, CPHA) = (0,0), (1,1) Clock Frequency (fSCLK) 10 MHz (max) Supply Voltage (VCC) 2.5V to 5.5V Read Current (5V) 1.0 mA (typical) Write Current (5V) 1.0 mA (typical)【10†L23‑L24】 Standby Current (5V) 0.1 µA (typical)【10†L24‑L25】 Operating Temperature –40°C to +125°C (TA)【10†L16‑L17】 Package 8‑pin TSSOP‑B【6†L37‑L38】 RoHS Status ROHS3 Compliant

A: The BR25H080FVT-2CE2 is an 8‑Kbit (8‑kilobit) serial Electrically Erasable Programmable Read‑Only Memory (EEPROM) manufactured by ROHM Semiconductor. It is organized as 1K words of 8 bits each (1K x 8) and is accessed via a standard Serial Peripheral Interface (SPI) bus. The device is housed in an 8‑pin TSSOP‑B (Thin Shrink Small Outline Package) measuring 3.0 × 6.4 mm, is qualified to the automotive AEC‑Q100 standard, and is rated for an industrial temperature range of –40°C to +125°C (TA).