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AT45DB021E-SSHN-T

A: The AT45DB021E-SSHN-T is optimised for low‑voltage, low‑power, and high‑speed embedded applications. The table below summarises its core specifications, drawn directly from manufacturer data and multiple distributor sources: Specification Value Memory Density 2 Mbit (2,162,688 bits) Memory Organization 1024 pages × 264 bytes (main memory) SRAM Buffers Two 264‑byte data buffers Memory Interface SPI / RapidS™ (Supports SPI modes 0 and 3) Max Clock Frequency 85 MHz (some sources specify 70 MHz for specific configurations) Max Access Time 8 ns Supply Voltage (VCC) 1.65V to 3.6V (1.8V, 2.5V, and 3.3V compatible) Active Read Current 4.5 mA (typical) Standby Current 25 μA (typical) Deep Power‑Down Current 3 μA (typical) Ultra‑Deep Power‑Down Current 200 nA (typical) Page Program / Write Cycle Time 8 μs (for word), 3 ms (for page) Erase Capabilities Page Erase (264 bytes), Block Erase (2KB), Sector Erase (32KB), Chip Erase Endurance 100,000 program/erase cycles (minimum) Data Retention 20 years (minimum) Operating Temperature (Industrial) –40°C to +85°C Package Type 8‑lead SOIC (4.80 × 3.81 mm) Moisture Sensitivity Level (MSL) 1 (Unlimited) RoHS Status ROHS3 Compliant, Pb‑free Additional advanced features include: User‑configurable page size: default 264 bytes per page, or 256 bytes per page (factory pre‑configurable option). Flexible programming options: Byte/Page Program directly into main memory, Buffer Write, and Buffer to Main Memory Page Program. Flexible erase architecture: supports Page Erase (264 bytes), Block Erase (2KB), Sector Erase (32KB), and Chip Erase (2‑Mbits). Advanced hardware and software data protection features: individual sector protection, individual sector lockdown to make any sector permanently read‑only. 128‑byte, One‑Time Programmable (OTP) Security Register: 64 bytes factory‑programmed with a unique identifier + 64 bytes user‑programmable. Continuous read capability through the entire array. Low‑power read option up to 15MHz for power‑sensitive designs. JEDEC Standard Manufacturer and Device ID Read for software identification.

A: The device uses a standard 4‑wire Serial Peripheral Interface (SPI) bus for communication, supporting both SPI Mode 0 (CPOL=0, CPHA=0) and Mode 3 (CPOL=1, CPHA=1), ensuring maximum compatibility with a wide range of microcontrollers and SoCs. The 8‑lead SOIC package provides the following signal connections: Pin Signal Group Function CS (Chip Select) Enables the device when driven low SCK (Serial Clock) Provides the clock signal for data transfer (up to 85 MHz) SI (Serial Data Input) Transmits data from the host to the device SO (Serial Data Output) Transmits data from the device to the host WP (Write Protect) Hardware write protection for the entire memory array or protected sectors RESET Hardware reset pin for device initialisation Communication is initiated by driving the Chip Select (CS) pin low. Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface, the DataFlash uses a serial interface to sequentially access its data. The host sends instruction opcodes followed by address and data bytes to perform read, program, erase, and status register operations. The device also supports RapidS™ operation, providing enhanced data transfer capability for high‑speed applications. The Continuous Read capability allows the host to access the entire memory array with a single read instruction, reducing command overhead and improving data throughput. Additionally, the SRAM buffers allow the host to receive data while a page in the main memory is being reprogrammed, optimising system performance in data‑intensive applications such as data logging.

A: The AT45DB021E-SSHN-T is engineered for high reliability in demanding embedded applications. Key specifications include: Reliability Parameter Specification Program/Erase Endurance 100,000 cycles per page (minimum) Data Retention 20 years (minimum) Page Program Time (Tpp) 3 ms (max) for a 264‑byte page Block Erase Time (2KB) 25 ms Operating Temperature (Industrial) –40°C to +85°C Active Read Current 4.5 mA (typical) Standby Current 25 μA (typical) Deep Power‑Down Current 3 μA (typical) Ultra‑Deep Power‑Down Current 200 nA (typical) The device also includes advanced hardware and software data protection features: Individual sector protection – protects specific sectors from accidental program or erase operations. Individual sector lockdown – makes any sector permanently read‑only for enhanced security. 128‑byte OTP Security Register: 64 bytes factory‑programmed with a unique identifier (for device traceability and anti‑counterfeiting) and 64 bytes user‑programmable. Hardware‑controlled reset options for robust system integration. These reliability figures, particularly the 100,000 program/erase cycles and 20‑year data retention, make the device suitable for applications that require frequent data updates (e.g., data logging, parameter storage) while guaranteeing long‑term data integrity over extended product lifecycles.

A: The AT45DB021E-SSHN-T is well‑suited for a wide range of embedded applications requiring low‑power, high‑reliability serial flash memory. Thanks to its DataFlash architecture with dual SRAM buffers, it is particularly optimised for data‑logging applications where buffering and real‑time data capture are critical. Typical applications include: Firmware and boot code storage – Storing system firmware, bootloaders, and configuration parameters in embedded systems. Data logging – Continuous recording of sensor data, system events, and operational logs without interrupting write operations. Industrial control systems – PLCs, HMIs, data loggers, and factory automation equipment. Medical devices – Diagnostic equipment, patient monitors, and portable instruments requiring reliable non‑volatile storage. Consumer electronics – Wearables, smart home appliances, and portable media devices. Telecommunications and networking equipment – Routers, switches, and broadband access devices. IoT edge devices – Sensor nodes, wireless modules, and smart controllers requiring low‑power operation and industrial temperature resilience. Digital voice, image, and program code storage. ⚠️ Important Lifecycle Information: The product lifecycle status for the AT45DB021E-SSHN-T is Active / In Production. Multiple authoritative distributor sources confirm the part status as Active: DigiKey lists the Part Status as Active with a manufacturer standard lead time of 12 weeks, and reports significant inventory in stock. Chip1Stop (authorised distributor) lists the lifecycle status as 量產中 (Mass Production). AlliData and Sourcengine both list the Part Status as Active. Renesas Electronics (the manufacturer) provides full product support on its website, with a published Longevity date of January 2034, indicating the product is expected to remain in production and supported for an extended period. Design Recommendations: For new designs, the AT45DB021E-SSHN-T remains an active, suitable choice for 2Mbit serial flash applications requiring the unique DataFlash SRAM buffer architecture, wide voltage range (1.65V to 3.6V), industrial temperature rating, and high reliability (100K cycles, 20‑year retention). However, engineers are advised to verify current availability, pricing, and lead times directly with an authorised Renesas distributor (such as DigiKey, Mouser, Farnell, or Arrow) before committing the part to a new high‑volume design. The device is available in Tape & Reel (T&R) packaging with a standard reel quantity of 4,000 units.