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MT48LC4M32B2P-6A IT:L

A: The MT48LC4M32B2P-6A IT:L is engineered for high performance and reliable memory storage. The table below summarises its core specifications: Specification Value Memory Density 128 Mbit (16 Mbyte) [6†L7-L8] Memory Organization 4M × 32 bits (4 Meg x 32) [9†L23-L24] Internal Bank Architecture 4 banks (1 Meg x 32 per bank) [6†L7-L8] Clock Frequency (max) 167 MHz [11†L12][2†L20] Access Time (tAC) 5.4 ns [2†L20][8†L10-L11][13†L18-L19] Write Cycle Time – Word, Page 12 ns [2†L13-L14] Supply Voltage (VDD/VDDQ) 3.0V to 3.6V (3.3V nominal) [8†L11-L12][10†L18] Operating Temperature (Industrial) -40°C to +85°C [8†L12][10†L19-L20][11†L13] Package Type 86‑pin TSOP II (TFSOP-86, 400 mil) [8†L9-L10][9†L23-L24] Moisture Sensitivity Level (MSL) 3 (168 hours) [10†L20][7†L29] RoHS Status ROHS3 Compliant [7†L28][13†L24] ECCN EAR99 [7†L28][10†L45]

A: The device uses a synchronous, parallel interface. All control, address, and data signals are registered on the positive edge of the clock input (CLK) [10†L33-L34], and the interface is LVTTL-compatible, simplifying connection to standard 3.3V logic systems [9†L15-L16]. Key signal groups include: Clock: CLK input for synchronous operation. Command Inputs: /CS (Chip Select), /RAS, /CAS, and /WE (Write Enable) to register active, read, write, and precharge commands. Address Inputs: A[0:11] for row addresses (multiplexed with column addresses) and BA[0:1] to select the internal memory bank. Data Bus: DQ[0:31] (32‑bit bidirectional data bus) with byte‑wide write control via individual DQM signals. Configuration: A Mode Register is programmed to set CAS latency, burst length, and burst type [16†L35-L36]. The device supports programmable burst lengths of 1, 2, 4, 8, or full page, and burst types can be sequential or interleaved [9†L13-L14][16†L31-L32]. It is PC100‑compliant and supports CAS latency options 2 and 3 [9†L11-L12][12†L31-L32].

A: As a volatile DRAM, the MT48LC4M32B2P-6A IT:L must be refreshed periodically to retain data. Key reliability specifications include: Refresh: Requires 4,096 refresh cycles every 64 ms (15.6 μs/row) for the industrial temperature range [8†L5-L6][9†L18-L19]. Internal Operation: Features internal banks and pipelined architecture to hide row access and precharge cycles, enabling high‑speed random access [10†L21-L27]. Operating Temperature: Rated for -40°C to +85°C, making it suitable for industrial environments [10†L19-L20][11†L13]. Moisture Sensitivity: MSL 3 (168 hours), requiring standard handling procedures [10†L20][14†L8-L9]. ESD Protection: Not explicitly specified, but typical for industry‑standard SDRAM, with standard handling precautions recommended. RoHS Status: ROHS3 Compliant, lead‑free [10†L45].

A: The MT48LC4M32B2P-6A IT:L is ideal for embedded systems requiring moderate memory density and high reliability. With its 32‑bit data bus, it is well‑suited for 32‑bit processor‑based systems. Typical applications include: Industrial control systems – PLCs, HMIs, robotics, and embedded controllers [5†L9-L10]. Networking and telecommunications – Routers, switches, base stations, and optical network terminals [10†L37][11†L20-L24][18†L35-L39]. Automotive electronics – Infotainment systems, telematics, and advanced driver‑assistance systems (ADAS) in industrial‑grade variants [5†L9-L10][18†L35-L39]. Medical devices – Diagnostic equipment, patient monitors, and portable instruments. Consumer electronics – Set‑top boxes, digital TVs, and gaming consoles. Servers and workstations – Older systems requiring SDRAM memory modules [18†L35-L39]. ⚠️ Important Lifecycle Information: The product lifecycle status for the MT48LC4M32B2P-6A IT:L is contradictory across authoritative manufacturer and distributor sources. Many manufacturer‑affiliated and distributor databases list the Part Life Cycle Code as Obsolete [5†L5-L6][5†L25-L27][17†L14-L15][18†L8-L9], indicating the product is no longer in active production and is not recommended for new designs. However, other sources list the manufacturing status as Active and the product as still available for purchase [11†L8][15†L22][14†L3-L5]. The discrepancy likely reflects the manufacturer‘s classification while distributors continue to sell remaining inventory. Given the official manufacturer designation of Obsolete, engineers are strongly advised to verify current lifecycle status, availability, and lead times directly with an authorised Micron distributor before committing this part to a new high‑volume design. Replacement / Alternative Options: For applications requiring a similar 128Mb SDRAM with comparable specifications, the following alternative devices are recommended: Alternative Part Manufacturer Package Notes MT48LC4M32B2P-6A AIT:L Micron Technology 86‑TSOP II Automotive‑grade variant; AEC‑Q100 qualified; supports –40°C to +105°C. DigiKey confirms this specific part is also Obsolete [13†L4-L5] AS4C4M32SA-6TIN Alliance Memory 86‑TSOP II Pin‑compatible substitute; 3.3V SDRAM, 166 MHz, 6ns, industrial temperature (–40°C to +85°C). This is the recommended drop‑in replacement for the MT48LC4M32B2P-6A IT:L [13†L5-L6][13†L29-L30] K4S281632I-TL75 Samsung 86‑TSOP II 128Mb SDRAM (2M x 32 x 4 banks), 3.3V, 143 MHz, industrial temperature [16†L23-L24] HY57V283220T-H SK Hynix 86‑TSOP II 128Mb SDRAM (4M x 32), 3.3V, 133 MHz, industrial temperature [16†L23-L24] IS42S32800G-6BLI ISSI 90‑Ball VFBGA 128Mb SDRAM (4M x 32), 3.3V, 166 MHz, industrial temperature, BGA package alternative [16†L24-L25] For legacy systems already using the MT48LC4M32B2P-6A IT:L, remaining inventory may still be available through specialist distributors. However, long‑term supply cannot be assured. For new designs requiring industrial temperature SDRAM, the AS4C4M32SA-6TIN from Alliance Memory is the recommended pin‑compatible drop‑in replacement, as it is listed as an active substitute by DigiKey with identical specifications [13†L29-L30].