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MT40A512M16TB-062E:R

A: The MT40A512M16TB-062E:R offers high speed and low power consumption. The table below summarizes its core specifications, drawn directly from manufacturer data and multiple distributor sources: Specification Value Memory Density 8 Gbit (1 GByte) Memory Organization 512M × 16 bits Memory Interface Parallel Clock Frequency (fCK) 1.6 GHz Access Time (tAC) 19 ns Write Cycle Time 15 ns Supply Voltage (VDD/VDDQ) 1.14V to 1.26V (1.2V nominal) Operating Temperature (TC) 0°C to 95°C (commercial grade) Package Type 96-ball FBGA (7.5 × 13 mm) RoHS Status ROHS3 Compliant The device features an 8n‑prefetch architecture combined with an interface designed to transfer two data words per clock cycle at the I/O pins. For the x16 configuration, the DRAM is internally configured as an eight‑bank DRAM. Additional features include: programmable data strobe preambles, data strobe preamble training, command/address latency, a multipurpose register for READ and WRITE capability, write leveling, self refresh mode, low‑power auto self refresh, temperature controlled refresh, fine granularity refresh, self refresh abort, output driver calibration, data bus inversion (DBI), command/address (CA) parity, data bus write cyclic redundancy check, per‑DRAM addressability, connectivity test, and JEDEC JESD‑79‑4 compliance.

A: The lifecycle status for the MT40A512M16TB-062E:R is contradictory across authoritative sources: DigiKey lists the Part Status as Obsolete and no longer manufactured. Farnell (Newark) lists the part as Active, currently in stock and available for purchase. Other distributor databases list the Product Status as Active. Given the conflicting lifecycle reports across distributors, engineers are strongly advised to verify current lifecycle status, availability, and lead times directly with an authorised Micron distributor (such as Mouser, Digi‑Key, Future Electronics, or Arrow) before committing this part to a new high‑volume design. For projects requiring long‑term supply assurance, the recommended substitute from DigiKey is the AS4C512M16D4B‑62BCN from Alliance Memory, Inc.

A: The device uses a standard DDR4 parallel interface, connecting to a memory controller via a 96‑ball FBGA package. The device supports 1.6 GHz operation with an access time of 19 ns and a write cycle time of 15 ns. Key interface signals include CK_t/CK_c differential clock inputs, CKE clock enable, CS_n chip select, command inputs (RAS_n, CAS_n, WE_n, ACT_n), bank address inputs (BA0‑BA1), bank group address inputs (BG0‑BG1), address inputs (A0‑A17), a 16‑bit bidirectional data bus (DQ[15:0]), differential data strobe signals (DQS_t/DQS_c) for two byte lanes, data mask/data bus inversion (DM_n/DBI_n), ODT on‑die termination control, ZQ calibration reference, asynchronous RESET_n, and optional command/address parity (PAR). All signals are referenced to the rising edge of CK_t/CK_c, with data transferred on both edges of the clock (Double Data Rate). The 8n‑prefetch architecture allows a single READ or WRITE operation to transfer an 8n‑bit wide data block at the internal core while the I/O pins perform two corresponding n‑bit wide, half‑clock‑cycle data transfers.

A: The MT40A512M16TB-062E:R is specified for commercial temperature operation. Key environmental and compliance specifications include: Specification Value Operating Temperature (TC) 0°C to 95°C Storage Temperature Not publicly specified, typical for DDR4 devices Moisture Sensitivity Level (MSL) 3 (168 hours) RoHS Status ROHS3 Compliant REACH Status REACH Unaffected ECCN EAR99