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RFQ

제품 집적 회로 IC메모리 IC 칩메모리 IC 제품M29W160EB70N6

Micron Technology

M29W160EB70N6

Name: M29W160EB70N6
Brand: Micron Technology
SKU: 774-M29W160EB70N6

제조업체:

Micron Technology

ERSA 부품 번호:

774-M29W160EB70N6

데이터 시트:

PDF 데이터시트

설명:

IC FLASH 16MBIT PARALLEL 48TSOP

RoHS 현황:

공유하다:

왜 우리를 선택해야 합니까?

전문 플랫폼

B2B 및 B2C 구매

초고속 배송

1-2일 이내 배송

다양한 종류

정품 제조업체

365일 보증

책임 있는 품질

기술 사양

작동 온도

-40°C ~ 85°C (TA)

메모리 인터페이스

Parallel

ECCN

EAR99

기억 정리

2M x 8, 1M x 16

장착 유형

Surface Mount

메모리 유형

Non-Volatile

제품상태

Obsolete

공급자 장치 패키지

48-TSOP

FAQ

Is the M29W160EB70N6 still in production, and what applications is it intended for?

A: The M29W160EB70N6 has been declared obsolete (End‑of‑Life) by its manufacturer and is no longer in active production. It remains available only from distributors or third‑party sellers with limited stock and is not recommended for new designs. When it was in production, the device was widely used in consumer electronics, automotive applications, industrial control systems, and networking equipment. Applications included firmware and boot code storage, configuration parameter retention, and data logging where a direct parallel processor bus interface was required.

What are the endurance and data retention specifications of the M29W160EB70N6?

A: The M29W160EB70N6 is designed for long‑term reliability in embedded applications. It is rated for 100,000 program/erase cycles per block, providing durability for frequent code updates and data logging. Additionally, the device guarantees data retention for up to 20 years when operated under normal conditions, ensuring stored firmware and user data remain intact over the expected product lifetime.

How is the memory array organized and what does "EB" signify?

A: The "EB" in the part number denotes a bottom boot block architecture. The 16‑Mbit array is partitioned into 1 boot block (16 KB), 2 parameter blocks (8 KB each), 1 small main block (32 KB), and 31 main blocks (64 KB each). This structure allows code and data to be managed with flexible erase granularities, and the bottom boot block is ideal for storing initialization code that must reside at the lowest memory region.

What are the key features and technical specifications of the M29W160EB70N6?

A: The device operates on a single 2.7 V to 3.6 V power supply, enabling direct integration into 3 V systems. It provides a 70 ns access time, uses a parallel asynchronous interface, and supports an industrial temperature range of –40 °C to +85 °C. The device offers a typical active read current of 10 mA and utilizes a CMOS‑based NOR Flash architecture for fast random‑access reads.

What is the M29W160EB70N6?

A: The M29W160EB70N6 is a 16‑Mbit (16‑megabit) parallel NOR Flash memory device originally manufactured by STMicroelectronics and subsequently carried by Numonyx and Micron Technology. It is a non‑volatile memory that can be read, erased, and reprogrammed, and is organized as either 2M × 8 bits (byte‑wide) or 1M × 16 bits (word‑wide). Featuring a 70 ns access time, the device is housed in a standard 48‑pin TSOP (Thin Small Outline Package) and is designed for embedded firmware and data storage applications.

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