Infineon Technologies

S25FL128SAGMFI013

A: This SPI Flash memory delivers high performance and low power consumption. The table below summarises its core specifications: Specification Value Memory Density 128 Mbit (16 Mbyte) Memory Organization 16M × 8 bits Technology NOR Flash with MirrorBit® Supply Voltage (VCC) 2.7 V to 3.6 V (3.0 V nominal) I/O Voltage (Versatile I/O) 1.65 V to 3.6 V Max. Clock Frequency 133 MHz (Fast Read) Page Program Time (Tpp) 250 µs (typical) Sector Erase Supports 4‑KB, 32‑KB, 64‑KB, and 256‑KB options Active Read Current 100 mA (max) Standby Current 70 µA (typical) Operating Temperature –40 °C to +85 °C (Industrial) Endurance 100,000 program/erase cycles (minimum) Data Retention 20 years (minimum) Package 16‑pin SOIC (300‑mil wide) RoHS Status RoHS3 Compliant, lead‑free

A: The device uses a standard Serial Peripheral Interface (SPI) bus, supporting SPI clock polarity and phase modes 0 and 3 for compatibility. It offers a rich set of high‑performance features: Multi‑I/O & DDR Support: It supports Single, Dual, Quad I/O, and Double Data Rate (DDR) read commands (including fast, dual, quad, and DDR versions) to maximize read throughput. Execute‑in‑Place (XIP): With high clock rates and Quad‑I/O or DDR‑QIO commands, the instruction read transfer rate can match or exceed traditional parallel NOR Flash, while reducing signal pin count dramatically. Quad‑Input Page Programming (QPP): This speeds up programming, especially useful for systems with slower clocks. Flexible Erase Architecture: Offers both a hybrid sector size (32 x 4‑KB sectors plus 64‑KB sectors) and a uniform 256‑KB erase block option for compatibility and ease of use with future devices. Automatic ECC: Includes built‑in hardware Error Correction Code (ECC) for single‑bit error correction. Security & Protection: Features a 1024‑byte One‑Time Programmable (OTP) array, individual sector protection, and advanced sector protection (ASP), all controllable by boot code or password. AutoBoot: Can automatically power up or reset and execute a Normal or Quad read command at a pre‑selected address.

A: The S25FL128SAGMFI013 is engineered for long‑term reliability. Write Endurance: Rated for a minimum of 100,000 program/erase cycles per sector. Data Retention: Guarantees data retention of at least 20 years. Built‑in Reliability: Includes an internal ECC for single‑bit error correction, which extends the usable life and data integrity.

A: The device is ideal for code shadowing, XIP (Execute‑in‑Place), and data storage in a variety of high‑demand embedded environments, including consumer electronics, automotive systems, industrial control, and networking equipment. Important Lifecycle Information: The product status for this part is Active. It is currently in production, with major distributors listing it as Active and having stock available.