GigaDevice

GD25LR256EYIGR

A: The GD25LR256EYIGR is designed for long‑term reliability in embedded applications. It is rated for a minimum of 100,000 program/erase cycles, making it suitable for applications that require frequent firmware updates or data logging. Additionally, the device guarantees a data retention period of 20 years, ensuring that stored code and critical data remain intact over the intended operational lifespan.

A: The GD25LR256EYIGR uses a standard 4‑wire SPI bus, operating in either SPI Mode 0 or Mode 3. For enhanced performance, the device supports multiple advanced interface modes: Single SPI: The traditional 3‑wire interface using SI (data in) and SO (data out) lines. Quad I/O: All four I/O pins (IO0, IO1, IO2, IO3) are used for bidirectional data transfer, delivering up to four bits per clock for significantly faster read and program operations. QPI (Quad Peripheral Interface): Operates entirely in 4‑bit mode for reduced command overhead and improved throughput. DTR (Double Transfer Rate): Transfers data on both the rising and falling edges of the clock, effectively doubling the data rate without increasing the clock frequency. The device also features a dedicated hardware RESET pin, a Write Protect pin (WP#), and supports both 3‑byte and 4‑byte address modes for seamless operation with large memories. For software integration, the QUAD Enable bit (non-volatile) must be configured accordingly; always refer to the datasheet for the exact command sequence.

A: The GD25LR256EYIGR offers high-speed data transfer and versatile interface options to meet diverse embedded system performance requirements. It supports multiple interface modes, including Single SPI, Quad I/O, QPI (Quad Peripheral Interface), and DTR (Double Transfer Rate) modes for enhanced data throughput. Key specifications include: Clock Frequency: Up to 104 MHz for fast read operations (single/quad I/O) Data Throughput: Up to 416 Mbits/s in Quad I/O mode, and up to 60 Mbytes/s in DTR Quad I/O mode Memory Organization: 256‑byte programmable pages with a typical page programming time of 0.3 ms Erase Flexibility: Supports uniform 4‑kbyte sectors, 32/64‑kbyte blocks, and full chip erase Low Power Consumption: Typical standby current of 21 μA and deep power‑down current of 3 μA Industrial Temperature Range: Operates reliably from –40°C to +85°C Since the part number may vary by package, always refer to the official datasheet for the most current specifications of your specific variant.

A: The GD25LR256EYIGR is a 256‑Mbit (32M × 8) Serial NOR Flash memory device manufactured by GigaDevice Semiconductor. It supports a standard Serial Peripheral Interface (SPI) and operates on a single 1.65V to 2V power supply. The device is housed in an 8‑pin WSON (6x8mm) package and is supplied in Tape & Reel packaging for automated assembly. The "IGR" suffix indicates industrial temperature range (–40°C to +85°C) and RoHS compliance.