메모리는 집적 회로에서 데이터 저장 장치로 사용되는 반도체 장치입니다. 이러한 장치는 비휘발성 또는 휘발성의 CBRAM, DRAM, EEPROM, EERAM, EPROM, 플래시, FRAM, NVSRAM, PCM(PRAM), PSRAM, RAM 및 SRAM의 여러 형식으로 제공됩니다. 이 장치의 메모리 크기는 64b ~ 6Tb이며 인터페이스는 I2C, MMC, 병렬, eMMC, 직렬, 단일 와이어, SPI, UFS, Xccela 버스 및 1-Wire입니다.
| 부분 # | 제조업체 | 설명 | 유효성 | 가격 | 수량 |
|---|---|---|---|---|---|
RMLV0816BGBG-4S2#AC0Memory ICs Products | CEL (California Eastern Laboratories) | SRAM Chip Async Single 3V/3.3V 8M-bit 512K x 16 55ns 48-Pin TFBGA Tray | 재고 | - | |
RMLV0816BGBG-4S2#KC0Memory ICs Products | CEL (California Eastern Laboratories) | SRAM Chip Async Single 3V/3.3V 8M-bit 512K x 16 55ns 48-Pin TFBGA T/R | 재고 | - | |
RMLV1616AGBG-5S2#AC0Memory ICs Products | CEL (California Eastern Laboratories) | SRAM Chip Async Single 3V/3.3V 16M-bit 2M/1M x 8/16-bit 55ns 48-Pin TFBGA Tray | 재고 | - | |
RMLV0408EGSA-4S2#AA1Memory ICs Products | CEL (California Eastern Laboratories) | SRAM Chip Async Single 3V/3.3V 4M-bit 512K x 8 45ns 32-Pin TSOP-I Tray | 재고 | - | |
RMLV1616AGSA-5S2#AA0Memory ICs Products | CEL (California Eastern Laboratories) | SRAM Chip Async Single 3V/3.3V 16M-bit 2M/1M x 8/16-bit 55ns 48-Pin TSOP-I Tray | 재고 | - | |
R1WV6416RBG-5SI#B0Memory ICs Products | CEL (California Eastern Laboratories) | SRAM Chip Async Single 3V 64M-bit 8M/4M x 8/16-bit 55ns 48-Pin FBGA Tray | 재고 | - | |
R1LV5256ESP-5SI#B0Memory ICs Products | CEL (California Eastern Laboratories) | SRAM Chip Async Single 3V/3.3V 256K-bit 32K x 8 55ns 28-Pin SOP Tube | 재고 | - | |
R1LP5256ESP-5SI#S0Memory ICs Products | CEL (California Eastern Laboratories) | SRAM Chip Async Single 5V 256K-bit 32K x 8 55ns 28-Pin SOP T/R | 재고 | - | |
RMLV1616AGSD-5S2#HC0Memory ICs Products | CEL (California Eastern Laboratories) | SRAM Chip Async Single 3V/3.3V 16M-bit 2M/1M x 8/16-bit 55ns 52-Pin TSOP-II T/R | 재고 | - | |
RMLV1616AGSD-5S2#AC0Memory ICs Products | CEL (California Eastern Laboratories) | SRAM Chip Async Single 3V/3.3V 16M-bit 2M/1M x 8/16-bit 55ns 52-Pin TSOP-II Tray | 재고 | - |