Power Module


Traction inverters are essential components in electric and hybrid vehicle systems, responsible for converting direct current (DC) from the battery into alternating current (AC) to power the electric motor. These inverters play a crucial role in managing the energy flow between the battery and the motor, ensuring efficient and reliable vehicle performance. They are designed to handle high voltages and currents, making them a key element in the electrification of automotive systems.

Power modules within traction inverters contain semiconductor devices such as IGBTs (Insulated Gate Bipolar Transistors) and MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors), which control the electrical signals and manage power distribution. These modules are built to withstand harsh environmental conditions, including extreme temperatures and vibrations, ensuring long-term durability and system stability.

Traction inverters are widely used in electric vehicles (EVs), hybrid electric vehicles (HEVs), and plug-in hybrid electric vehicles (PHEVs). They enable smooth acceleration, regenerative braking, and efficient energy management, contributing to improved fuel economy and reduced emissions. As the automotive industry continues to shift towards electrification, the demand for advanced traction inverters and power modules is growing rapidly.

These components are integral to the development of next-generation electric mobility solutions, supporting the transition to sustainable transportation. Their design and performance directly impact the overall efficiency, range, and reliability of electric vehicles, making them a critical focus area for automotive electronics innovation.


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Power Module

Related Parts


Series Name Description Manufacturer Name Attribute Description
onsemi 5.6V, 100mA, 0.3Ω typical RDS(on), 1.8V to 5.5V input, 2.3µA IQ, ultra-low quiescent current LDO, SOT-23 package, suitable for portable and battery-powered applications.
onsemi 40V, 7.5A N-channel Power MOSFET, 14mΩ RDS(on), TO-263 package, 175°C operating temperature, suitable for high-efficiency power conversion applications.
onsemi 40V, 6A N-channel MOSFET, 7.5mΩ Rds(on), 1.8V logic level, SOT-787 package, high efficiency for power management applications.
onsemi 75V, 800A, SiC MOSFET module, 4-pin DSC package, low inductance, high efficiency, suitable for high-power applications.
onsemi 600V, 75mΩ, 120A, SiC MOSFET in D2PAK-7L package, 18V gate voltage, low gate charge, high switching frequency, suitable for high-efficiency power conversion applications.
onsemi 600V, 75mΩ, 4A, SiC MOSFET; VGS(th): 3.5V; Qg: 45nC; Ciss: 1175pF; Rth(j-c): 1.7°C/W; TO-263-7 package; suitable for high-efficiency power conversion.
onsemi 40V, 2A N-channel power MOSFET, 7.5mΩ RDS(on), 1.8V logic level gate, high efficiency for power management, suitable for automotive and industrial applications.
onsemi 1700V, 90mΩ SiC MOSFET, 2-Pin SuperSiC™, 10V VGS(th), 15V VGS(max), 25A ID, low gate charge, high switching frequency, suitable for high-efficiency power systems.
onsemi Capacitance: 120µF, Voltage: 26V, Tolerance: ±20%, Temperature Range: -40°C to +105°C, Ripple Current: 2.1A, ESR: 35mΩ, Case Size: 14.3mm x 10mm, RoHS compliant.
onsemi Voltage: 2.3V to 5.5V; Operating Temp: -40°C to +125°C; Output Current: 900mA; Quiescent Current: 22µA; Dropout Voltage: 180mV@500mA; Package: DFN-6