The Load Driver/High-Side Switch is a critical component within Automotive Electronics, specifically in the Electrification & Battery Systems domain, and plays an essential role in Battery Management Systems (BMS). This device is designed to control and manage electrical loads by switching power from the battery to various vehicle systems, ensuring safe and efficient power distribution.
As part of the BMS, the Load Driver/High-Side Switch helps regulate current flow, protect circuits from overloads, and enhance system reliability. It is commonly used in electric and hybrid vehicles to manage high-current applications such as motor drives, charging systems, and auxiliary power supplies. Its ability to handle high voltages and currents makes it ideal for use in modern electrified vehicles where precise power control is essential.
This component is also vital in improving energy efficiency and reducing power loss, contributing to longer battery life and better overall vehicle performance. It is often integrated with other BMS elements to monitor and manage battery health, ensuring optimal operation under varying driving conditions.
Applications of the Load Driver/High-Side Switch include power distribution in EVs, control of high-power accessories, and management of onboard electronics. Its robust design and advanced features make it suitable for both passenger and commercial vehicles, supporting the transition toward sustainable and intelligent transportation solutions. Overall, this component is a key enabler in the development of efficient and reliable automotive electrification systems.
Series Name | Description | Manufacturer Name | Attribute Description |
---|---|---|---|
NXP Semiconductors | 12-channel high-speed signal conditioner, 6 Gbps per channel, low jitter, CML/CMOS I/O, 3.3 V supply, 196-pin FCBGA package, supports optical and electrical interfaces, integrated equalization and diagnostics. | ||
Microchip Technology | Zero-drift, low-noise instrumentation amplifier; 25 V/V fixed gain; 1.8V to 5.5V supply; 10ยตV max offset; 0.05ยตV/ยฐC drift; 650kHz bandwidth; 1.1mA quiescent current; operates from -40ยฐC to +125ยฐC. | ||
onsemi | 1200V, 23mฮฉ, SiC MOSFET, 7L D2PAK, Vth=3.5V, Qg=120nC, Qrr=240nC, Eon=1.8mJ, Eoff=1.6mJ, Tj=175ยฐC, high-speed switching, low gate charge, suitable for power conversion applications. | ||
onsemi | 1200V, 40mฮฉ SiC MOSFET, 3rd gen, TO-247-4L, high switching frequency, low gate charge, optimized for high-efficiency power systems. | ||
onsemi | 1200V, 40A, SiC MOSFET; Vgs(ยฑ20V), Rds(on) 70mฮฉ, Qg 140nC, Qrr 140nC, Tj(max) 175ยฐC; TO-247-4L package; fast switching, low gate charge, suitable for high-frequency power applications. | ||
onsemi | 750V, 70mฮฉ SiC MOSFET, 1200V max VDS, 30A ID, 125ยฐC max Tj, TO-247-4L package, low gate charge, high switching efficiency, suitable for high-frequency power applications. | ||
onsemi | 750V, 60mฮฉ SiC MOSFET, 4-pin TO-247 package, high switching frequency, low gate charge, optimized for high-efficiency power conversion applications. | ||
onsemi | 40V, 7.5A N-channel MOSFET, 5mฮฉ RDS(on), 1.8V gate threshold, SMD package, 125ยฐC max operating temperature, low Qg and Qgd for high-efficiency power switching applications. | ||
onsemi | 1200V, 7A, 4-pin SiC MOSFET, 70mฮฉ RDS(on), TO-247-4L package, high-speed switching, low gate charge, suitable for high-efficiency power applications. | ||
onsemi | 1200V, 35mฮฉ, SiC JFET, 3.3A continuous drain current, 1.75A pulsed, 65W power dissipation, TO-247-3 package, suitable for high-frequency power applications. |